ESD-Performance Enhancement of Circular Ultra-High-Voltage 300-V N-Channel Lateral-Diffused MOSFETs by Source/Drain Embedded Schottky Diodes
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Published:2020-11
Issue:11
Volume:41
Page:1673-1676
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ISSN:0741-3106
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Container-title:IEEE Electron Device Letters
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language:
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Short-container-title:IEEE Electron Device Lett.
Author:
Lin Po-LinORCID,
Chen Shen-LiORCID,
Fan Sheng-KaiORCID
Funder
Ministry of Science & Technology of Taiwan
Taiwan Semiconductor Research Institute
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials