Degradation Mechanisms of SiC MOSFET Power Module With Cu–Cu Die Top Interconnects Under Power Cycling Stress

Author:

Shi Yidian1,Chen Yuan2ORCID,Zhu Wenhui3ORCID,He Hu3ORCID

Affiliation:

1. School of Mechanical and Electrical Engineering, Central South University, Changsha, China

2. National Key Laboratory of Science and Technology on Reliability Physics and Application of Electronic Component, Fifth Electronics Research Institute of the Ministry of Industry and Information Technology, Guangzhou, China

3. State Key Laboratory of Precision Manufacturing for Extreme Service Performance and the School of Mechanical and Electrical Engineering, Central South University, Changsha, China

Funder

National Natural Science Foundation of China

Foundation for Outstanding Youth in Natural Science of Guangdong Province

Key-Area Research and Development Program of Guangdong Province

National Key Research and Development Program of China

State Key Laboratory of Precision Manufacturing for Extreme Service Performance

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Reference18 articles.

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3