A 23-34 GHz Wideband GaN Low-Noise Amplifier for 5G Millimeter-Wave Applications
Author:
Affiliation:
1. Fudan University,State Key Laboratory of ASIC and System,Shanghai,China,201203
2. Pazhou Lab,Guangzhou,China,510320
Funder
National Key Research and Development Program of China
Research and Development
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9790065/9790355/09790567.pdf?arnumber=9790567
Reference7 articles.
1. A 22–30-GHz GaN Low-Noise Amplifier With 0.4–1.1-dB Noise Figure
2. Ka-band LNA MMIC’s realized in Fmax>580 GHz GaN HEMT technology;micovic;IEEE Compound Semiconductor Integrated Circuit Symp,2016
3. A 3 to 10GHz LNA Using a Wideband LC-ladder Matching Network;ismail;ISSCC Dig Tech Papers,2004
4. Analysis of the Survivability of GaN Low-Noise Amplifiers
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1. A 19–31GHz K/Ka-band Broadband Low Noise Amplifier with High Gain and High Flatness;2022 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP);2022-11-27
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