Reliability of 3D NAND flash memory with a focus on read voltage calibration from a system aspect

Author:

Papandreou Nikolaos,Ioannou Nikolas,Parnell Thomas,Pletka Roman,Stanisavljevic Milos,Stoica Radu,Tomic Sasa,Pozidis Haralampos

Publisher

IEEE

Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Modeling Retention Errors of 3D NAND Flash for Optimizing Data Placement;ACM Transactions on Design Automation of Electronic Systems;2024-06-21

2. Achieving Near-Zero Read Retry for 3D NAND Flash Memory;Proceedings of the 29th ACM International Conference on Architectural Support for Programming Languages and Operating Systems, Volume 2;2024-04-27

3. RiF: Improving Read Performance of Modern SSDs Using an On-Die Early-Retry Engine;2024 IEEE International Symposium on High-Performance Computer Architecture (HPCA);2024-03-02

4. Effect of Noncircular Channel on Distribution of Threshold Voltage in 3D NAND Flash Memory;Micromachines;2023-10-28

5. Modeling Retention Errors on Modern 3D-Flash Products;2023 IEEE International Symposium on Circuits and Systems (ISCAS);2023-05-21

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