Fundamental Limit to Scaling Si Field-Effect Transistors Due to Source-to-Drain Direct Tunneling-Reference-Cited by-同舟云学术

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Fundamental Limit to Scaling Si Field-Effect Transistors Due to Source-to-Drain Direct Tunneling

Published:2019-03 Issue:3 Volume:66 Page:1167-1173
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Markov Stanislav^ORCID,Kwok Yanho,Li Jun^ORCID,Zhou Weijun,Zhou Yi^ORCID,Chen Guanhua

Funder

University Grants Council, Hong Kong, within the Area of Excellence on Theory, Modeling and Simulation of Emerging Electronics

SZSTI Project

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/8649693/08634937.pdf?arnumber=8634937

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Exploring Intertwined Quantum and Cryogenic Behaviour in Ultra-Scaled 10nm Mosfet: A Negf Quantum Ballistic Simulation;2024

2. Odyssey of the charge pumping technique and its applications from micrometric- to atomic-scale era;Journal of Applied Physics;2023-12-08

3. Source-to-drain Tunneling Analysis in p-type Si and Ge Based NWTs/NSTs;2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD);2023-09-27

4. Investigation of the Direct Source to Drain Tunneling in 5 nm Nanotube Junctionless Field Effect Transistor;2023 2nd International Conference on Paradigm Shifts in Communications Embedded Systems, Machine Learning and Signal Processing (PCEMS);2023-04-05

5. Computational perspective on recent advances in quantum electronics: from electron quantum optics to nanoelectronic devices and systems;Journal of Physics: Condensed Matter;2022-02-22

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