Incremental Drain-Voltage-Ramping Training Method for Ferroelectric Field-Effect Transistor Synaptic Devices-Reference-Cited by-同舟云学术

Incremental Drain-Voltage-Ramping Training Method for Ferroelectric Field-Effect Transistor Synaptic Devices

Published:2022-01 Issue:1 Volume:43 Page:17-20
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Nguyen Manh-Cuong^ORCID,Lee Kitae^ORCID,Kim Sihyun^ORCID,Youn Sangwook,Hwang Yeongjin^ORCID,Kim Hyungjin^ORCID,Choi Rino^ORCID,Kwon Daewoong^ORCID

Funder

Brain Korea 21 Four Program

Future Semiconductor Device Technology Development Program through the Ministry of Trade, Industry and Energy (MOTIE) and the Korea Semiconductor Research Consortium

National Research Foundation (NRF) funded by the Korean Ministry of Science and ICT

Samsung Electronics Co., Ltd

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9664971/09614154.pdf?arnumber=9614154

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