Dependence of current match on back-gate bias in weakly inverted MOS transistors and its modeling
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx1/4/10579/00488004.pdf?arnumber=488004
Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Energy Savings and Performance Improvement in Subthreshold Using Adaptive Body Bias;Proceedings of the on Great Lakes Symposium on VLSI 2017;2017-05-10
2. A Statistical Model for the Headed and Tail Distributions of Random Telegraph Signal Magnitudes in Nanoscale MOSFETs;IEEE Transactions on Electron Devices;2014-07
3. An accurate method for predicting temperature-dependent current mismatch in weak inversion region of long and wide channel MOSFET without subthreshold hump;Japanese Journal of Applied Physics;2014-05-29
4. Suppression Techniques of Subthreshold Hump Effect for High-Voltage MOSFET;JSTS:Journal of Semiconductor Technology and Science;2013-10-31
5. A novel bulk-input low voltage and low power four quadrant analog multiplier in weak inversion;Analog Integrated Circuits and Signal Processing;2012-09-05
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