High-Performance Polycrystalline Silicon TFT on the Structure of a Dopant-Segregated Schottky-Barrier Source/Drain-Reference-Cited by-同舟云学术

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High-Performance Polycrystalline Silicon TFT on the Structure of a Dopant-Segregated Schottky-Barrier Source/Drain

Published:2010-03 Issue:3 Volume:31 Page:228-230
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Sung-Jin Choi ,Jin-Woo Han ,Sungho Kim ,Dong-Il Moon ,Moongyu Jang ,Yang-Kyu Choi

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/5419202/05398906.pdf?arnumber=5398906

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Schottky barrier transistor in emerging electronic devices;Nanotechnology;2023-06-15

2. Impact of Gaussian Grain Boundary Trap States on the Performance of the LTPS TFTs;2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON);2022-11-26

3. Binary-Synaptic Plasticity in Ambipolar Ni-Silicide Schottky Barrier Poly-Si Thin Film Transistors Using Chitosan Electric Double Layer;Nanomaterials;2022-09-03

4. Schottky Barrier Thin Film Transistor (SB-TFT) on low-temperature polycrystalline silicon;Solid-State Electronics;2016-12

5. Sub-100 nm Ferroelectric-Gate Thin-Film Transistor with Low-Temperature PZT Fabricated on SiO2/Si Substrate;Ferroelectrics Letters Section;2015-05-04

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