Temperature Coefficients of Crystal Defects in Multicrystalline Silicon Wafers-Reference-Cited by-同舟云学术

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Temperature Coefficients of Crystal Defects in Multicrystalline Silicon Wafers

Published:2020-03 Issue:2 Volume:10 Page:449-457
ISSN:2156-3381
Container-title:IEEE Journal of Photovoltaics
language:
Short-container-title:IEEE J. Photovoltaics

Author:

Kristensen Sissel Tind^ORCID,Nie Shuai^ORCID,Berthod Charly,Strandberg Rune^ORCID,Odden Jan Ove,Hameiri Ziv

Funder

Australian Renewable Energy Agency

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/5503869/9003432/08995555.pdf?arnumber=8995555

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Recombination Parameter $\gamma$: Modeling and Comments;IEEE Journal of Photovoltaics;2023-07

2. Growth and Defects in Cast‐Mono Silicon for Solar Cells: A Review;physica status solidi (a);2022-08-28

3. Temperature sensitivity maps of silicon wafers from photoluminescence imaging: The effect of gettering and hydrogenation;Progress in Photovoltaics: Research and Applications;2022-05-24

4. Advanced photoluminescence imaging using non‐uniform excitation;Progress in Photovoltaics: Research and Applications;2021-10-11

5. Unravelling the silicon-silicon dioxide interface under different operating conditions;Solar Energy Materials and Solar Cells;2021-06

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