16 × 16 Solar-Blind UV Detector Based on β-Ga<sub>2</sub>O<sub>3</sub> Sensors-Reference-Cited by-同舟云学术

16 × 16 Solar-Blind UV Detector Based on β-Ga₂O₃ Sensors

Published:2023-07 Issue:7 Volume:44 Page:1140-1143
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Shen Gao-Hui¹,Liu Zeng¹^ORCID,Zhang Mao-Lin¹^ORCID,Guo Yu-Feng¹^ORCID,Tang Wei-Hua¹^ORCID

Affiliation:

1. Innovation Center for Gallium Oxide Semiconductor (IC-GAO) and the National and Local Joint Engineering Laboratory for RF Integration and Micro-Assembly Technologies, College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications (NJUPT), Nanjing, China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10168002/10115448.pdf?arnumber=10115448

Reference24 articles.

1. Fully Transparent and High‐Performance ε‐Ga ₂ O ₃ Photodetector Arrays for Solar‐Blind Imaging and Deep‐Ultraviolet Communication

2. Patterned growth of β-Ga2O3 thin films for solar-blind deep-ultraviolet photodetectors array and optical imaging application