On the Understanding of Defects in Short-Term Negative Bias Temperature Instability (NBTI) for Sub-20-nm DRAM Technology-Reference-Cited by-同舟云学术

On the Understanding of Defects in Short-Term Negative Bias Temperature Instability (NBTI) for Sub-20-nm DRAM Technology

Published:2023-06 Issue:6 Volume:44 Page:939-942
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Wang Da¹^ORCID,Zhou Longda¹^ORCID,Xue Yongkang¹^ORCID,Ren Pengpeng¹,Sun Zixuan²^ORCID,Wang Zirui²,Wang Jianping³,Wu Blacksmith³,Ji Zhigang¹^ORCID,Wang Runsheng²^ORCID,Huang Ru²

Affiliation:

1. National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University, Shanghai, China

2. Institute of Microelectronics, Peking University, Beijing, China

3. ChangXin Memory Technologies, Hefei, China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10132335/10098807.pdf?arnumber=10098807

Reference16 articles.

1. Toward Automated Defect Extraction From Bias Temperature Instability Measurements

2. Impacts of non-negligible electron trapping/detrapping on the NBTI characteristics in silicon nanowire transistors with TiN metal gates;zhang;IEDM Tech Dig,2008

3. Defect level distributions and atomic relaxations induced by charge trapping in amorphous silica

4. Single- Versus Multi-Step Trap Assisted Tunneling Currents—Part I: Theory

5. AC NBTI studied in the 1 Hz -- 2 GHz range on dedicated on-chip CMOS circuits

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4. A Comprehensive Review of DRAM NBTI Issues and Solutions;2023 IEEE International Conference on Memristive Computing and Applications (ICMCA);2023-12-08