Computational Modeling of Polycrystalline Silicon on Oxide Passivating Contact for Silicon Solar Cells-Reference-Cited by-同舟云学术

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Computational Modeling of Polycrystalline Silicon on Oxide Passivating Contact for Silicon Solar Cells

Published:2019-04 Issue:4 Volume:66 Page:1819-1826
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Younas Rehan^ORCID,Imran Hassan^ORCID,Shah Syed Ijlal Hassan,Abdolkader Tarek M.^ORCID,Butt Nauman Zafar^ORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/8668593/08661772.pdf?arnumber=8661772

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analytical modeling of contact resistance and recombination for silicon heterojunction solar cells using hybrid carrier selective passivating contacts;Physica Scripta;2024-08-20

2. Development of Theoretical Model for Effective Carrier Lifetime in Polycrystalline Semiconductors;IEEE Transactions on Electron Devices;2023-10

3. Crystalline Silicon (c-Si)-Based Tunnel Oxide Passivated Contact (TOPCon) Solar Cells: A Review;Energies;2023-01-07

4. A Simulation Study of Hybrid Carrier Selective Passivating Contacts for n-Silicon Solar Cells;2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON);2022-11-26

5. Local Enhancement of Dopant Diffusion from Polycrystalline Silicon Passivating Contacts;ACS Applied Materials & Interfaces;2022-04-05

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