Fabrication of high-performance LDDFET's with Oxide sidewall-spacer technology-Reference-Cited by-同舟云学术

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Fabrication of high-performance LDDFET's with Oxide sidewall-spacer technology

Published:1982-04 Issue:4 Volume:29 Page:590-596
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Tsang P.J.,Ogura S.,Walker W.W.,Shepard J.F.,Critchlow D.L.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/31851/01482245.pdf?arnumber=1482245

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1. A Refined Polycide Gate Process with Silicided Diffusions for Submicron MOS Applications;Journal of The Electrochemical Society;2019-12-07

2. MOSFET Modeling;Encyclopedia of RF and Microwave Engineering;2005-04-15

3. Channel Hot Electron Degradation-Delay in MOS Transistors Due to Deuterium Anneal;VLSI Technology;2003-03-19

4. On the time-dependent degradation of LDD n-MOSFETs under hot-carrier stress;Microelectronics Reliability;1999-09

5. Mosfet Scaling-the Driver of VLSI Technology;Proceedings of the IEEE;1999-04

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