Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Cited by
15 articles.
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1. Electrochemical capacitance-voltage profiling of nonuniformly doped GaAs heterostructures with SQWs and MQWs for LED applications;TURKISH JOURNAL OF PHYSICS;2018-08-15
2. The influence of edge effects on the determination of the doping profile of silicon pad diodes;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2017-09
3. Determination of the p-spray profile for n+p silicon sensors using a MOSFET;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2017-09
4. Methods for the measurement of two-dimensional doping profiles;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1992-01
5. Steady-state current through a multilayer homostructure;IEEE Transactions on Electron Devices;1992