Measurement of hole leakage and impact ionization currents in bistable metal—tunnel-oxide—semiconductor junctions
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/16/31906/01483968.pdf?arnumber=1483968
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Quantization effects in hole inversion layers of tunnel MOS emitter transistors on Si (100) and (111) substrates atT= 300 K;Semiconductor Science and Technology;1999-01-01
2. Optically Induced Switching in Bistable Structures: Heavily Doped n+- Polysilicon - Tunnel Oxide Layer - n - Silicon;Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices;1998
3. Current switching in bistable structures: Heavily doped n +-polysilicon-tunnel-oxide layer-n-silicon;Physics of the Solid State;1997-03
4. Technology and device scaling considerations for CMOS imagers;IEEE Transactions on Electron Devices;1996
5. Silicon Auger transistor—New insight into the performance of a tunnel MIS emitter transistor;Solid-State Electronics;1995-08
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