A comprehensive approach to the design and fabrication of a field-effect transistor with graphene channel-Reference-Cited by-同舟云学术

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A comprehensive approach to the design and fabrication of a field-effect transistor with graphene channel

Published:2022-10-24 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE International Conference on Engineering Veracruz (ICEV)
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Author:

Herrera-Gonzalez M.¹,Martinez-Castillo J.¹,Garcia-Gonzalez L.¹,Delgado-Alvarado E.¹

Affiliation:

1. Universidad Veracruzana,Centro de Investigación en Micro y Nanotecnología

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9958945/9959106/09959723.pdf?arnumber=9959723

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Simulation-Based Study of Gaussian-Doped Channel in Stacked Gate Oxide MOS Transistor;2023 9th International Conference on Signal Processing and Communication (ICSC);2023-12-21

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