Thick-Strained-Si/SiGe CMOS Technology With Selective-Epitaxial-Si Shallow-Trench Isolation-Reference-Cited by-同舟云学术

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Thick-Strained-Si/SiGe CMOS Technology With Selective-Epitaxial-Si Shallow-Trench Isolation

Published:2007-09 Issue:9 Volume:54 Page:2460-2465
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Miyamoto M..,Sugii N..,Hoshino Y..,Yoshida Y..,Kondo M..,Kimura Y..,Ohnishi K..

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/4294178/04294225.pdf?arnumber=4294225

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Different architectures of relaxed Si1−xGex/Si pseudo-substrates grown by low-pressure chemical vapor deposition: Structural and morphological characteristics;Journal of Crystal Growth;2011-08

2. Strain-Controlled Laterally Diffused Metal–Oxide–Semiconductor Transistor Utilizing Buried-Polysilicon Sinker as Stressor;Japanese Journal of Applied Physics;2010-11-22

3. Study of lithium diffusion into silicon–germanium crystals;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2010-05

4. STUDY OF LITHIUM DIFFUSION INTO SILICON-GERMANIUM CRYSTALS;Astroparticle, Particle and Space Physics, Detectors and Medical Physics Applications;2008-06

5. A sequential logic device realized by integration of in-plane gate transistors in InGaAs∕InP;Applied Physics Letters;2008

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