Boosting n-Type Doping Levels of Ge With Co-Doping by Integrating Plasma-Assisted Atomic Layer Deposition and Flash Annealing Process-Reference-Cited by-同舟云学术

Boosting n-Type Doping Levels of Ge With Co-Doping by Integrating Plasma-Assisted Atomic Layer Deposition and Flash Annealing Process

Published:2019-09 Issue:9 Volume:40 Page:1507-1510
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Baik Seunghun^ORCID,Kwon Hyeokjin,Paeng Chuck,Zhang He^ORCID,Kalkofen Bodo^ORCID,Jang Jae Eun,Kim Y. S.,Kwon Hyuk-Jun^ORCID

Funder

Daegu Gyeongbuk Institute of Science and Technology (DGIST) Start-up Fund Program of the Ministry of Science, Information and Communication Technology (ICT) and Future Planning

Lam Research Project

Deutsche Forschungsgemeinschaft

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/8811651/08777106.pdf?arnumber=8777106

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