A Steep-Slope MoS2-Nanoribbon MOSFET Based on an Intrinsic Cold-Contact Effect-Reference-Cited by-同舟云学术

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A Steep-Slope MoS2-Nanoribbon MOSFET Based on an Intrinsic Cold-Contact Effect

Published:2019-09 Issue:9 Volume:40 Page:1550-1553
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Logoteta Demetrio^ORCID,Pala Marco G.^ORCID,Choukroun Jean,Dollfus Philippe,Iannaccone Giuseppe^ORCID

Funder

European Union’s Horizon 2020 Research and Innovation Programme

Italian Ministry of Education, University and Research (MIUR) through the PRIN Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/8811651/08759914.pdf?arnumber=8759914

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4. Identifying atomically thin isolated-band channels for intrinsic steep-slope transistors by high-throughput study;Science Bulletin;2024-05

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