Frequency-scalable SiGe bipolar RF front-end design

Author:

Shana'a O.,Linscott I.,Tyler L.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Cited by 43 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. A Feed-Forward Gain Enhancement Technique in a Narrow-Band Low Noise Amplifier Using Active Inductor;Lecture Notes in Electrical Engineering;2022-12-01

2. Highly Sensitive Broadband SiGe HBT LNA: Genetic Algorithm based Optimization and Design Methodology;2022 IEEE 41st International Conference on Electronics and Nanotechnology (ELNANO);2022-10-10

3. A Low Power SiGe-BiCMOS LNA for COMPASS Applications;Applied Mechanics and Materials;2014-02-06

4. Design of a Mesfet based Low Noise Amplifier with Improved Noise Figure for Low Power Wireless Applications in 2-3 GHz;2013 Third International Conference on Advances in Computing and Communications;2013-08

5. X-band, high performance, SiGe-heterojunction bipolar transistors-low noise amplifier for phased array radar applications;IET Microwaves, Antennas & Propagation;2012

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