Configurable BCAM/TCAM Based on 6T SRAM Bit Cell and Enhanced Match Line Clamping
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Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9043348/9056889/09056974.pdf?arnumber=9056974
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Content-addressable memory using selective-charging and adaptive-discharging scheme for low-power hardware search engine;Integration;2024-09
2. Comparative Evaluation of 6T, 8T and 10T Ternary SRAM Cells Schemes for Future VLSI and Power Electronics;2024 Second International Conference on Smart Technologies for Power and Renewable Energy (SPECon);2024-04-02
3. 15.1 A 0.795fJ/bit Physically-Unclonable Function-Protected TCAM for a Software-Defined Networking Switch;2024 IEEE International Solid-State Circuits Conference (ISSCC);2024-02-18
4. CMOS-RRAM Based Non-Volatile Ternary Content Addressable Memory (nvTCAM);IEEE Transactions on Nanotechnology;2024
5. A Reliable and High-Speed 6T Compute-SRAM Design With Dual-Split-V DD Assist and Bitline Leakage Compensation;IEEE Transactions on Very Large Scale Integration (VLSI) Systems;2023-05
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