A 3.6-4.5 GHz Doherty RF Power Amplifier Using $0.25-\mu \mathrm{m}$ GaN/SiC HEMT and GaAs IPD Technology
Author:
Affiliation:
1. Taiwan Semiconductor Research Institute,National Applied Research Laboratories,Hsinchu,Taiwan
2. National Central University,Department of Electrical Engineering,Taoyuan,Taiwan
Funder
Ministry of Science and Technology of Taiwan
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10339391/10339529/10339579.pdf?arnumber=10339579
Reference8 articles.
1. A high efficiency fully-monolithic 2-stage C-band GaN power amplifier for 5G microcell applications
2. Power Up Potential Power Amplifier Technologies for 5G Applications
3. A New High Efficiency Power Amplifier for Modulated Waves
4. 3–3.6-GHz Wideband GaN Doherty Power Amplifier Exploiting Output Compensation Stages
5. A Fully Integrated C-band GaN MMIC Doherty Power Amplifier with High Gain and High Efficiency for 5G Application
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