Self-Aligned in 2Pitch Cell Array Transistor (S2CAT) for 4F2 Based DRAM Generation Extension-Reference-Cited by-同舟云学术

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Self-Aligned in 2Pitch Cell Array Transistor (S2CAT) for 4F2 Based DRAM Generation Extension

Published:2023-12-09 Issue: Volume: Page:1-4
ISSN:
Container-title:2023 International Electron Devices Meeting (IEDM)
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Short-container-title:

Author:

Park Seokhan¹,Oh Gyuhwan¹,Yoo Bowon¹,Jeong Moonyoung¹,Lee Kiseok¹,Lee Sangho¹,Hong Seongbin¹,Sung Sang Hyun¹,Choi Hyungeun¹,Jo Taegeun¹,Jang Wonchul¹,Park Jaekyun¹,Park Sangwuk¹,Yun Hyunchul¹,Kim Jinbum¹,Jang Sunghwan¹,Kuh Bong-Jin¹,Kim Ilgweon¹,Oh Jeonghoon¹,Han Jin-Woo¹,Park Jemin¹

Affiliation:

1. Samsung Electronics Co.,Semiconductor R&D Center,Hwaseong-si,Korea,18448

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10413659/10413660/10413704.pdf?arnumber=10413704

Reference6 articles.

1. Nanoscale CMOS spacer FinFET for the terabit era

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. My Journey with Semiconductors;Engineering;2024-09

2. Effect of Back Gate on Word Line Disturb Immunity of a Vertical Channel DRAM Cell Array Transistor;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

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