Material Developments and Domain Wall-Based Nanosecond-Scale Switching Process in Perpendicularly Magnetized STT-MRAM Cells-Reference-Cited by-同舟云学术

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Material Developments and Domain Wall-Based Nanosecond-Scale Switching Process in Perpendicularly Magnetized STT-MRAM Cells

Published:2018-02 Issue:2 Volume:54 Page:1-9
ISSN:0018-9464
Container-title:IEEE Transactions on Magnetics
language:
Short-container-title:IEEE Trans. Magn.

Author:

Devolder Thibaut^ORCID,Kim Joo-Von,Swerts J.,Couet S.,Rao S.,Kim W.,Mertens S.,Kar G.,Nikitin V.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/20/8266606/08017454.pdf?arnumber=8017454

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Energy Efficient All-Electric-Field-Controlled Multiferroic Magnetic Domain-Wall Logic;Nano Letters;2023-07-19

2. Deterministic and stochastic aspects of current-induced magnetization reversal in perpendicular nanomagnets;Physical Review B;2023-06-28

3. Inducing or suppressing the anisotropy in multilayers based on CoFeB;Physical Review Materials;2023-05-30

4. Critical role of post-annealing in Ta/Co60Fe20B20/Ta thin film heterostructures: Structural, static, and dynamic properties;Journal of Magnetism and Magnetic Materials;2022-11

5. Frequency of the Spin-Transfer Nano-Oscillator Based on a Perpendicular Tunnel Nanoheterostructure with Nonzero Ellipticity;Journal of Experimental and Theoretical Physics;2022-05

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