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Characterization of Static and Dynamic Behavior of 1200 V Normally off GaN/SiC Cascode Devices

  • Published:2020-12 Issue:12 Volume:67 Page:10284-10294
  • ISSN:0278-0046
  • Container-title:IEEE Transactions on Industrial Electronics
  • language:
  • Short-container-title:IEEE Trans. Ind. Electron.

Author:

Wang YuruORCID,Lyu Gang,Wei JinORCID,Zheng ZheyangORCID,He JiabeiORCID,Lei JiachengORCID,Chen Kevin J.ORCID

Funder

Hong Kong RGC Research Impact Fund

Shenzhen Science and Technology Innovation Committee

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Control and Systems Engineering

Cited by 21 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Progress of GaN-based E-mode HEMTs;Journal of Physics D: Applied Physics;2024-07-23

2. 3D Co-packaging of GaN/SiC Cascode Device for High-Frequency Power Switching Operation;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02

3. Protecting SiC JFET From Gate Overstress in GaN/SiC Cascode Device Without Compromising Switching Performance;IEEE Transactions on Power Electronics;2024-05

4. Improving the Reverse-Recovery Performance of Si SJ-MOSFETs With a Low-Voltage GaN HEMT in a Cascode Configuration;IEEE Transactions on Power Electronics;2024-05

5. p‐GaN Selective Nitridation to Obtain a Normally Off p‐GaN Gate AlGaN/GaN High‐Electron‐Mobility Transistors;physica status solidi (RRL) – Rapid Research Letters;2023-12-03
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