Impact of Epi-Si growth temperature on Ge-pFET performance-Reference-Cited by-同舟云学术

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Impact of Epi-Si growth temperature on Ge-pFET performance

Published:2009-09 Issue: Volume: Page:
ISSN:
Container-title:2009 Proceedings of the European Solid State Device Research Conference
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Author:

Mitard J.,Martens K.,DeJaeger B.,Franco J.,Shea C.,Plourde C.,Leys F.E.,Loo R.,Hellings G.,Eneman G.,Wang Wei-E,Lin J.C.,Kaczer B.,DeMeyer K.,Hoffmann T.,DeGendt S.,Caymax M.,Meuris M.,Heyns M.M.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5307512/5331301/05331351.pdf?arnumber=5331351

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-Temperature-Grown Single-Crystal Si Epitaxially on Ge, Followed by Direct Deposition of High-κ Dielectrics–Attainment of Low Interfacial Traps and Highly Reliable Ge MOS;ACS Applied Electronic Materials;2021-04-21

2. Process Conditions for Low Interface State Density in Si-passivated Ge Devices with TmSiO Interfacial Layer;ECS Journal of Solid State Science and Technology;2020-12-01

3. High mobility Ge pMOSFETs with amorphous Si passivation: impact of surface orientation;Nanoscale Research Letters;2019-01-08

4. Influence of the Source Composition on the Analog Performance Parameters of Vertical Nanowire-TFETs;IEEE Transactions on Electron Devices;2015-01

5. Strained Germanium–Tin (GeSn) P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors Featuring High Effective Hole Mobility;International Journal of Thermophysics;2014-11-05

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