FDSOI bottom MOSFETs stability versus top transistor thermal budget featuring 3D monolithic integration

Author:

Fenouillet-Beranger C.,Previtali B.,Batude P.,Nemouchi F.,Casse M.,Garros X.,Tosti L.,Rambal N.,Lafond D.,Dansas H.,Pasini L.,Brunet L.,Deprat F.,Gregoire M.,Mellier M.,Vinet M.

Publisher

IEEE

Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Metal Inter-layer Via Keep-out-zone in M3D IC: A Critical Process-aware Design Consideration;2023 24th International Symposium on Quality Electronic Design (ISQED);2023-04-05

2. Optimization of solid-phase epitaxial regrowth performed by UV nanosecond laser annealing;MRS Advances;2022-12-21

3. A monolithic 3D design technology co-optimization with back-end-of-line oxide channel transistor;Proceedings of the 17th ACM International Symposium on Nanoscale Architectures;2022-12-07

4. Investigation on Contacts Thermal Stability for 3D Sequential Integration;2022 IEEE International Reliability Physics Symposium (IRPS);2022-03

5. Toward Low-Temperature Solid-Source Synthesis of Monolayer MoS2;ACS Applied Materials & Interfaces;2021-08-24

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