Author:
Rifat Maruf Ahsan,Shakil Md. Sharifuzzman,Bhuiyan Ashraful Ghani,Hashimoto Akihiro
Reference16 articles.
1. GaN epitaxial layers grown on multilayer graphene by MOCVD
2. The rise of graphene. Nature Materials;geim,2007
3. Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene
4. Growth of GaN on Sapphire via Low-Temperature Deposited Buffer Layer and Realization of p-type GaN by Mg Doping Followed by Low-Energy-Electron Beam Irradiation;amano;Nobel Lecture,2014
5. Layered boron nitride as a release layer for mechanical transfer of GaN-based devices
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Theoretical Study on Epitaxial Growthof High-Quality III-Nitride on Graphene;2024 6th International Conference on Electrical Engineering and Information & Communication Technology (ICEEICT);2024-05-02