Effects of High-Pressure Annealing on Random Telegraph Signal Noise Characteristic of Source Follower Block in CMOS Image Sensor-Reference-Cited by-同舟云学术

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Effects of High-Pressure Annealing on Random Telegraph Signal Noise Characteristic of Source Follower Block in CMOS Image Sensor

Published:2013-02 Issue:2 Volume:34 Page:190-192
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Kwon Hyuk-Min,Han In-Shik,Kwon Sung-Kyu,Jang Jae-Hyung,Kwak Ho-Young,Choi Woon-Il,Ha Man-Lyun,Lee Ju-Il,Hwang Hyun-sang,Lee Hi-Deok

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/6417986/06407727.pdf?arnumber=6407727

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interface traps, correlated mobility fluctuations, and low-frequency noise in metal–oxide–semiconductor transistors;Applied Physics Letters;2023-04-24

2. Effects of Interface Traps and Hydrogen on the Low-Frequency Noise of Irradiated MOS Devices;IEEE Transactions on Nuclear Science;2023

3. Low-frequency noise in nanowires;Nanoscale;2023

4. Evaluation of Prestrain Annealing Impact on Nanomaterial Sensitization;Journal of Nanomaterials;2021-10-04

5. Novel method to optimize the column random telegraph signal performance in CMOS image sensor;IEICE Electronics Express;2019

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