Permanent wafer bonding in the low temperature by using various plasma enhanced chemical vapour deposition dielectrics

Author:

Kim Soon-Wook,Peng Lan,Miller Andy,Beyer Gerald,Beyne Eric,Lee Chung-Sun

Publisher

IEEE

Cited by 18 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. 3D Heterogeneous Integration with Sub-3μm Bond Pitch Chip-to-Wafer Hybrid Bonding;2024 IEEE 74th Electronic Components and Technology Conference (ECTC);2024-05-28

2. Contamination-Free Cu/SiCN Hybrid Bonding Process Development for Sub- μm Pitch Devices with Enhanced Bonding Characteristics;2023 IEEE 73rd Electronic Components and Technology Conference (ECTC);2023-05

3. Low Temperature and Fine Pitch Nanocrystalline Cu/SiCN Wafer-to-Wafer Hybrid Bonding;2023 IEEE 73rd Electronic Components and Technology Conference (ECTC);2023-05

4. Development of 3-layer stacked global shutter CMOS image sensor with pixel pitch Cu-to-Cu interconnection and high-capacity capacitors;2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM);2023-05

5. Origin of Voids at the SiO2/SiO2 and SiCN/SiCN Bonding Interface Using Positron Annihilation Spectroscopy and Electron Spin Resonance;ECS Journal of Solid State Science and Technology;2023-03-01

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