Computational Study for Spin-orbit Torque Magnetic Random Access Memory
Author:
Affiliation:
1. Fert Beijing Institute, School of Integrated Circuit Science and Engineering, Beihang University,Beijing,China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9720433/9720494/09720624.pdf?arnumber=9720624
Reference16 articles.
1. Field-free switching of perpendicular magnetization through spin–orbit torque in antiferromagnet/ferromagnet/oxide structures
2. Fast Low-Current Spin-Orbit-Torque Switching of Magnetic Tunnel Junctions through Atomic Modifications of the Free-Layer Interfaces
3. Energy‐Efficient Ultrafast SOT‐MRAMs Based on Low‐Resistivity Spin Hall Metal Au 0.25 Pt 0.75
4. Threshold Current Density for Perpendicular Magnetization Switching Through Spin-Orbit Torque
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