Parasitic Drain Series Resistance Effects on Non-conducting Hot Carrier Reliability-Reference-Cited by-同舟云学术

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Parasitic Drain Series Resistance Effects on Non-conducting Hot Carrier Reliability

Published:2022-03 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Hauser M. J.¹,Srinivasan P.¹,Vallett A.¹,Krishnasamy R.¹,Guarin F.¹,Brochu D.¹,Pham V.¹,Min B.¹

Affiliation:

1. Globalfoundries US Inc,Technology Reliability and Developement,Malta,NY,USA,12020

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9764406/9764408/09764575.pdf?arnumber=9764575

Reference8 articles.

2. Parasitic S/D Resistance Effects on Hot-Carrier Reliability in Body-Tied FinFETs;han;IEEE Electron Device Letters,2006

3. Hot-Carrier-Induced Damage and its Spatial Location on RF Noise in Deep-Submicrometer NMOSFETs;su;IEEE Transactions on Microwave Theory and Techniques,2008

4. Figures of Merit for CMOS Low-Noise Amplifiers and Estimates for their Theoretical Limits;belostotski;ECCTD,2021

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Prompt Shift of On-State Resistance in LDMOS Devices: Causes, Recovery, and Reliability Implications;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02

2. Investigation of the Off-State Degradation in Advanced FinFET Technology—Part I: Experiments and Analysis;IEEE Transactions on Electron Devices;2023-03

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