Power Cycling Reliability of SiC MOSFETs in Discrete and Module Packages-Reference-Cited by-同舟云学术

Power Cycling Reliability of SiC MOSFETs in Discrete and Module Packages

Published:2022-03 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE International Reliability Physics Symposium (IRPS)
language:
Short-container-title:

Author:

Kovacevic-Badstuebner I.¹,Race S.¹,Ziemann T.¹,Tiwari S.¹,Grossner U.¹,Mengotti Elena²,Bianda Enea²,Jormanainen Joni³

Affiliation:

1. ETH Zurich,Advanced Power Semiconductor Laboratory,Zurich,Switzerland

2. ABB Switzerland Ltd.,Corporate Research Center,Baden,Switzerland

3. ABB Drives Oy,Helsinki,Finland

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9764406/9764408/09764498.pdf?arnumber=9764498

Reference20 articles.

1. Power cycling capability of modules with SiC-fiodes;herold;Proc of 8th Int Conf on Integrated Power Electronics Systems (CIPS),2014

2. Reliability and Ruggedness of Silicon Carbide;ziemann;Ph D Dissertation,2020

3. Análise, por SEM e EDX, da composição e morfologia das partículas de carga de compósitos de baixa contração e tradicionais

4. A transfer-molded high temperature SiC power module withstanding up to 250 °C;mitamura;Proc of 10th Int Conf on Integrated Power Electronics Systems (CIPS),2018

5. Finite element modeling predicts the effects of voids on thermal shock reliability and thermal resistance of power device;chang;Welding Journal,2006

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Review on Power Cycling Reliability of SiC Power Device;Electronic Materials;2024-06-10

2. Automated Extraction of Low-Order Thermal Model With Controllable Error Bounds for SiC MOSFET Power Modules;IEEE Transactions on Power Electronics;2024-01

3. SiC Power TrenchMOS Transistor under harsh repetitive switching conditions;2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe);2023-09-04

4. Industrial approach to the chip and package reliability of SiC MOSFETs (Invited);2023 IEEE International Reliability Physics Symposium (IRPS);2023-03

5. Extended Analysis of Power Cycling Behavior of TO-Packaged SiC Power MOSFETs;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03