GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse-Reference-Cited by-同舟云学术

GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse

Published:2022-03 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Chiocchetta F.¹,De Santi C.¹,Rampazzo F.¹,Mukherjee K.¹,Grunenputt Jan²,Sommer Daniel²,Blanck Herve²,Lambert Benoit²,Gerosa A.¹,Meneghesso G.¹,Zanoni E.¹,Meneghini M.¹

Affiliation:

1. University of Padova,Department of Information Engineering,Padova,Italy,35131

2. UMS - United Monolithic Semiconductors

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9764406/9764408/09764510.pdf?arnumber=9764510

Reference10 articles.

1. Trapping phenomena in AlGaN/GaN HEMTs: a study based on pulsed and transient measurements;gaudenzio,0

2. Improved reliability of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) with high density silicon nitride passivation

3. Direct observation of 0.57eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors;aaron;Solid State Electronics,0

4. Comprehensive study into underlying mechanisms of anomalous gate leakage degradation in GaN high electron mobility transistors

5. Failure mechanisms of GaN HEMTs for microwave and millimeter-wave applications: from interdiffusion effects to hot-electrons degradation

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