Short-Circuit Characterization and Protection of 10-kV SiC <sc>mosfet</sc>-Reference-Cited by-同舟云学术

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Short-Circuit Characterization and Protection of 10-kV SiC mosfet

Published:2019-02 Issue:2 Volume:34 Page:1755-1764
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Ji Shiqi^ORCID,Laitinen Marko,Huang Xingxuan^ORCID,Sun Jingjing^ORCID,Giewont William,Wang Fei,Tolbert Leon M.^ORCID

Funder

Advanced Research Projects Agency - Energy

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/63/8580624/08356114.pdf?arnumber=8356114

Cited by 66 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Short Circuit Protection of Silicon Carbide MOSFETs: Challenges, Methods, and Prospects;IEEE Transactions on Power Electronics;2024-10

2. An Ultrafast Universal Short-Circuit Protection Technique Based on Gate Current Detection for SiC MOSFET;IEEE Transactions on Power Electronics;2024-10

3. Review on Short-Circuit Protection Methods for SiC MOSFETs;Energies;2024-09-09

4. Vertical-Channel Fin-SiC (VC Fin-SiC) With Partially Highly Doped JFET for 3.3-kV Applications;IEEE Transactions on Electron Devices;2024-09

5. A Hybrid Desaturation Fast Detection Circuit for Bridge Leg Short-Circuit Faults;IEEE Transactions on Power Electronics;2024-08

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