Highly Sensitive Narrowband AlGaN Solar Blind Ultraviolet Photodetectors Using Polarization Induced Heterojunction Barrier-Reference-Cited by-同舟云学术

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Highly Sensitive Narrowband AlGaN Solar Blind Ultraviolet Photodetectors Using Polarization Induced Heterojunction Barrier

Published:2024-04 Issue:4 Volume:45 Page:550-553
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Lv Zesheng¹^ORCID,Wen Quan²,Fang Yezhang¹,Peng Zhuoya¹,Jiang Hao¹

Affiliation:

1. State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, China

2. School of Electronics and Communication Engineering, Shenzhen Polytechnic University, Shenzhen, China

Funder

National Key Research and Development Program of China

Key Realm Research and Development Program of Guangzhou

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/55/10479122/10422972.pdf?arnumber=10422972

Reference16 articles.

1. Low-dimensional wide-bandgap semiconductors for UV photodetectors

2. Calcium Titanate Orthorhombic Perovskite-Nickel Oxide Solar-Blind UVC Photodetectors with Unprecedented Long-Term Stability Exceeding 500 Days and Their Applications to Real-Time Flame Detection

3. Flexible Filter-Free Narrowband Photodetector with High Gain and Customized Responsive Spectrum

4. All-inorganic lead-free NiOx/Cs3Bi2Br9 perovskite heterojunction photodetectors for ultraviolet multispectral imaging

5. Self-powered photodetectors based on β-Ga2O3/4H–SiC heterojunction with ultrahigh current on/off ratio and fast response

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