Miniaturized High-Selectivity High-Resistivity-Silicon IPD Bandpass Filter Based on Multiple Transmission Paths
Author:
Affiliation:
1. School of Electronic and Information Engineering, South China University of Technology, Guangzhou, China
2. School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China
Funder
National Natural Science Foundation of China
Young Elite Scientists Sponsorship Program by the China Association for Science and Technology
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx7/55/10479122/10431743.pdf?arnumber=10431743
Reference18 articles.
1. 5.9 GHz Longitudinal Leaky SAW Filter With FBW of 9.2% and IL of 1.8 dB Using LN/Quartz Structure
2. A Switchless Quad Band Filter Bank Based on Ferroelectric BST FBARs
3. High Selectivity Millimeter-Wave On-Chip Band-Pass Filter With Semi-Lumped Dual-Mode Resonator by Using GaAs Technology
4. 60-GHz Compact Dual-Mode On-Chip Bandpass Filter Using GaAs Technology
5. On-Chip Millimeter-Wave Integrated Absorptive Bandstop Filter in (Bi)-CMOS Technology
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1. On-chip coupled-resonator filter with controllable transmission zeros based on hybrid coupling technique;AEU - International Journal of Electronics and Communications;2024-10
2. Miniaturized Bandpass Filter with Ultrawide-Stopband and High Selectivity using Glass-Based IPD Technology;Microelectronics Journal;2024-09
3. Miniaturized IPD band pass filter with low insertion loss based on modified T‐section for 5G applications;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2024-05
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