Express Technology of Electrochemical Etching of Gallium Arsenide for the Formation of Massive Island Pores-Reference-Cited by-同舟云学术

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Express Technology of Electrochemical Etching of Gallium Arsenide for the Formation of Massive Island Pores

Published:2023-10-02 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE 4th KhPI Week on Advanced Technology (KhPIWeek)
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Author:

Suchikova Yana¹,Kovachov Sergii¹,Karipbaev Zhakyp²,Zhydachevskyy Yaroslav³,Lysak Anastasiia³,Popov Anatoli I.⁴

Affiliation:

1. Berdyansk State Pedagogical University,The Department of Physics and Methods of Teaching Physics,Berdyansk,Ukraine

2. L.N. Gumilyov Eurasian National University,2 Satpayev Str.,Nur-Sultan,Kazakhstan,010008

3. Berdyansk State Pedagogical University,Berdyansk,Ukraine

4. Institute of Solid State Physics, University of Latvia, 8 Kengaraga str.,Riga,Latvia,LV-1063

Funder

Ministry of Education and Science

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10311574/10312804/10312896.pdf?arnumber=10312896

Reference28 articles.

1. Porous semiconductor compounds

2. GaAs//Si Multijunction Solar Cells Fabricated via Mechanical Stack Technology Using Pd Nanoparticles and Metal-Assisted Chemical Etching

3. Core–Shell GaAs-Fe Nanowire Arrays: Fabrication Using Electrochemical Etching and Deposition and Study of Their Magnetic Properties

4. Controlled Electroplating of Noble Metals on III-V Semiconductor Nanotemplates Fabricated by Anodic Etching of Bulk Substrates

5. Chemical etching induced microporous nickel backbones decorated with metallic Fe@hydroxide nanocatalysts: an efficient and sustainable OER anode toward industrial alkaline water-splitting

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