Localized thermal effects in Gate-all-around devices
Author:
Affiliation:
1. Intel Corporation,Logic Technology Development,Hillsboro,USA
2. Corporate Quality Network Intel Corporation,Hillsboro,USA
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10117589/10117581/10117903.pdf?arnumber=10117903
Reference10 articles.
1. Beyond FinFET Devices: GAA, CFET, and 2D Material FET;lin;IEDM Tutorial,2021
2. Self-heat reliability considerations on Intel's 22nm Tri-Gate technology
3. Self-Heating Effects in Nanowire Transistors;hossain;NSTI-Nanotech,2010
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5. Theory of the Flow of Electrons and Holes in Germanium and Other Semiconductors
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1. Accelerating Device-Circuit Self-Heating Simulations with Dynamic Time Evolution for GAAFET;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14
2. A Review of Reliability in Gate-All-Around Nanosheet Devices;Micromachines;2024-02-13
3. Localized Thermal Effect Enhanced NBTI in Multifin pFinFETs Under Low Drain Bias;IEEE Electron Device Letters;2024-02
4. Material characteristics governing in-plane phonon-polariton thermal conductance;Journal of Applied Physics;2023-10-24
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