A self-aligned EPROM structure with superior data retention
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx1/55/2046/00056484.pdf?arnumber=56484
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
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2. CdSe/ZnS core–shell quantum dots charge trapping layer for flexible photonic memory;Journal of Materials Chemistry C;2015
3. Design of 32 kbit one-time programmable memory for microcontroller units;Journal of Central South University;2012-12
4. Investigation of a High Quality and Ultraviolet-Light Transparent Plasma-Enhanced Chemical Vapor Deposition Silicon Nitride Film for Non-Volatile Memory Application;Japanese Journal of Applied Physics;1995-09-15
5. Floating gate memories reliability;Quality and Reliability Engineering;1992
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