A 4F2 Vertical Gate-all-around Nanowire Compute-in-memory Device Integrated in (1T1R) Cross-Point Arrays on Silicon
Author:
Affiliation:
1. Lund University,Dept. of Electrical and Information Technology,Sweden
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9889022/9889006/09889066.pdf?arnumber=9889066
Reference10 articles.
1. Balancing SET/RESET Pulse for $>\hbox{10}^{10}$ Endurance in $\hbox{HfO}_{2}\hbox{/Hf}$ 1T1R Bipolar RRAM
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3. Integration of HfO2-based 3D OxRAM with GAA stacked-nanosheet transistor for high-density embedded memory;ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC);2023-09-11
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