Optoelectronic Characteristics of Direct-Current and Alternating-Current White Thin-Film Light-Emitting Diodes Based on Hydrogenated Amorphous Silicon Nitride Film-Reference-Cited by-同舟云学术

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Optoelectronic Characteristics of Direct-Current and Alternating-Current White Thin-Film Light-Emitting Diodes Based on Hydrogenated Amorphous Silicon Nitride Film

Published:2008-04 Issue:4 Volume:55 Page:978-985
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Yeh Rong-Hwei,Yu Tai-Rong,Chung Te-Cheng,Lo Shih-Yung,Hong Jyh-Wong

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/4475396/04459062.pdf?arnumber=4459062

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Silicon nanocrystals: unfading silicon materials for optoelectronics;Materials Science and Engineering: R: Reports;2019-10

2. Plasma-deposited hydrogenated amorphous silicon films: multiscale modelling reveals key processes;RSC Advances;2017

3. Limitations of high pressure sputtering for amorphous silicon deposition;Materials Research Express;2016-03-07

4. Suppression of Hole Overflow and Enhancement of Light Emission Efficiency in Si Quantum Dots Based Silicon Nitride Light Emitting Diodes;IEEE Journal of Selected Topics in Quantum Electronics;2014-07

5. Direct-Current and Alternating-Current Driving Si Quantum Dots-Based Light Emitting Device;IEEE Journal of Selected Topics in Quantum Electronics;2014-07

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