Author:
Kao-Shuo Chang ,Green M.L.,Hattrick-Simpers J.R.,Takeuchi I.,Suehle J.S.,Celik O.,De Gendt S.
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Cited by
9 articles.
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1. High-throughput methodology for the realization of high-entropy sub-nm equivalent-oxide-thickness high-dielectric-constant Ba(Ti,Zr,Ta,Hf,Mo)O3 film-based metal-oxide-semiconductor-related devices;Materials Today Physics;2023-09
2. Applications of High Throughput (Combinatorial) Methodologies to Electronic, Magnetic, Structural, and Energy-Related Materials;Encyclopedia of Materials: Metals and Alloys;2022
3. Gate Metal and Cap Layer Effects on Ge nMOSFETs Low-Frequency Noise Behavior;IEEE Transactions on Electron Devices;2019-02
4. Applications of high throughput (combinatorial) methodologies to electronic, magnetic, optical, and energy-related materials;Journal of Applied Physics;2013-06-21
5. Combinatorial screening of work functions in Ta–C–N/HfO2/Si advanced gate stacks;Scripta Materialia;2013-03