An Extensive Experimental Analysis of the Kink Effects in ${ S}_{22}$ and ${ h}_{21}$ for a GaN HEMT-Reference-Cited by-同舟云学术

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An Extensive Experimental Analysis of the Kink Effects in ${ S}_{22}$ and ${ h}_{21}$ for a GaN HEMT

Published:2014-03 Issue:3 Volume:62 Page:513-520
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Crupi Giovanni,Raffo Antonio,Marinkovic Zlatica,Avolio Gustavo,Caddemi Alina,Markovic Vera,Vannini Giorgio,Schreurs Dominique M. M.-P.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx7/22/6754198/06720215.pdf?arnumber=6720215

Cited by 55 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 2DEG-Concentration-Modulated High-Power-Density AlGaN/GaN RF HEMTs;IEEE Electron Device Letters;2024-07

2. Accurate Modeling of GaN HEMTs Oriented to Analysis of Kink Effects in S₂₂ and h₂₁: An Effective Machine Learning Approach;IEEE Journal of the Electron Devices Society;2024

3. RF modeling – II;GaN Transistor Modeling for RF and Power Electronics;2024

4. GaN HEMT Current-Gain Peak: An Insight into the Effects of the Bias Condition;2023 16th International Conference on Advanced Technologies, Systems and Services in Telecommunications (TELSIKS);2023-10-25

5. A Systematic and Numerical Methodology for GaN HEMT Current-Gain Peak Analysis Using the Complex Lorentzian Function;IEEE Microwave and Wireless Technology Letters;2023-07

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