Integrated 240-GHz Dielectric Sensor With dc Readout Circuit in a 130-nm SiGe BiCMOS Technology-Reference-Cited by-同舟云学术

Integrated 240-GHz Dielectric Sensor With dc Readout Circuit in a 130-nm SiGe BiCMOS Technology

Published:2018-09 Issue:9 Volume:66 Page:4232-4241
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Wang Defu^ORCID,Schmalz Klaus^ORCID,Eissa Mohamed Hussein^ORCID,Borngraber Johannes,Kucharski Maciej^ORCID,Elkhouly Mohamed,Ko Minsu^ORCID,Ng Herman Jalli^ORCID,Kissinger Dietmar^ORCID

Funder

Deutsche Forschungsgemeinschaft

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx7/22/8454363/08374092.pdf?arnumber=8374092

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