An 8 ns 256 K BiCMOS RAM-Reference-Cited by-同舟云学术

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An 8 ns 256 K BiCMOS RAM

Published:1989 Issue:4 Volume:24 Page:1021-1027
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Tamba N.,Miyaoka S.,Odaka M.,Ogiue K.,Yamada K.,Ikeda T.,Hirao M.,Higuchi H.,Uchida H.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx1/4/1419/00034087.pdf?arnumber=34087

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-Performance Bicmos Circuit Structures;High-Performance Digital VLSI Circuit Design;1996

2. Novel high speed circuit structures for BiCMOS environment;IEEE Journal of Solid-State Circuits;1995-05

3. A 1.5-ns 256-kb BiCMOS SRAM with 60-ps 11-K logic gates;IEEE Journal of Solid-State Circuits;1994

4. Process integration, architecture and simulation of a GHz-BiCMOS ULSI technology;Microelectronics Journal;1993-11

5. Testability analysis and fault modeling of BiCMOS circuits;Journal of Electronic Testing;1992-08

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