Cosputtered Metal and$hboxSiO_2$Layers for Use in Thick-Film MISiC$hboxNH

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Cosputtered Metal and$hboxSiO_2$Layers for Use in Thick-Film MISiC$hboxNH_3$Sensors

Published:2006-08 Issue:4 Volume:6 Page:887-897
ISSN:1530-437X
Container-title:IEEE Sensors Journal
language:
Short-container-title:IEEE Sensors J.

Author:

Wingbrant H.,Persson M.,Abom A.E.,Eriksson M.,Andersson B.,Simko S.,Kubinski D.J.,Visser J.H.,Spetz A.L.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Instrumentation

Link

http://xplorestaging.ieee.org/ielx5/7361/34765/01661568.pdf?arnumber=1661568

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3. On a Pd/InAlAs metamorphic high electron mobility transistor (MHEMT)-based hydrogen sensor;Sensors and Actuators B: Chemical;2009-06

4. Correlation of TPD and impedance measurements on the desorption of NH3 from zeolite H-ZSM-5;Solid State Ionics;2008-10-30

5. Hybrid gas sensor platform based on capacitive coupled field effect transistors: Ammonia and nitrogen dioxide detection;Sensors and Actuators B: Chemical;2007-10-20

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