N-SiCN/P-Silicon Heterojunction With Porous Silicon Buffer Layer for Low-Cost and High-Temperature Ultraviolet (UV) Detecting Applications-Reference-Cited by-同舟云学术

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N-SiCN/P-Silicon Heterojunction With Porous Silicon Buffer Layer for Low-Cost and High-Temperature Ultraviolet (UV) Detecting Applications

Published:2009-07 Issue:7 Volume:9 Page:849-853
ISSN:1530-437X
Container-title:IEEE Sensors Journal
language:
Short-container-title:IEEE Sensors J.

Author:

Chiang Yen-Ting,Fang Yean-Kuen,Chou Tse-Heng,Lin Cheng-I,Juang Feng-Renn,Kuo Ta-Wei,Wu Kuen-Hsien,Ho Mingtsu,Shie Jin-Shu

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Instrumentation

Link

http://xplorestaging.ieee.org/ielx5/7361/4957493/05075732.pdf?arnumber=5075732

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A low cost n-SiCN/p-PS/p-Si heterojunction for high temperature ultraviolet detecting applications;Sensors and Actuators A: Physical;2018-08

2. Design of an Ultraviolet Light Intensity Monitor for Personally Wearable Devices;IEEE Sensors Journal;2018-06-01

3. High performance n-ZnO/p-metal-oxides UV detector grown in low-temperature aqueous solution bath;Thin Solid Films;2017-03

4. Studies of n-SiCN/p-Si diode for low cost and high temperature ultraviolet light sensing applications;Sensors and Actuators A: Physical;2016-06

5. The Poly-SiC MSM Photodiode on Ceramic SiC Substrate for Low-Cost Ultraviolet Light Sensing Applications;IEEE Sensors Journal;2011-12

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