An IGBT behavior model suitable for series applications-Reference-Cited by-同舟云学术

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An IGBT behavior model suitable for series applications

Published:2024-05-17 Issue: Volume:43 Page:3499-3504
ISSN:
Container-title:2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia)
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Author:

Bao Xianzhe¹,Li Chushan¹,Xu Yunfei²,Lu Juanjuan²,Li Wuhua³,He Xiangning³

Affiliation:

1. Zhejiang University–University of Illinois at Urbana Champaign Institute, Zhejiang University,Haining,China,314400

2. State Grid Smart Grid Research Institute Co., Ltd.,Beijing,China,102200

3. Zhejiang University,College of Electrical Engineering,Hangzhou,China,310027

Funder

Nature

National Key Research and Development Program of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10567049/10567050/10567740.pdf?arnumber=10567740

Reference16 articles.

1. Behavioral modeling of the IGBT using the Hammerstein configuration

2. Parameter extraction for the static and dynamic model of IGBT

3. New switching simulation models of power electronic parts as IGBT, MOSFET and power diode

4. An improved understanding for the transient operation of the power insulated gate bipolar transistor (IGBT)

5. Full dynamic power bipolar device models for circuit simulation

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