Single-voltage-supply operation of Ga/sub 0.51/In/sub 0.49/P/In/sub 0.15/Ga/sub 0.85/As insulated-gate FETs for power application-Reference-Cited by-同舟云学术

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Single-voltage-supply operation of Ga/sub 0.51/In/sub 0.49/P/In/sub 0.15/Ga/sub 0.85/As insulated-gate FETs for power application

Published:1999-01 Issue:1 Volume:20 Page:21-23
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Shey-Shi Lu ,Yao-Wen Hsu ,Chin-Chun Meng ,Liang-Po Chen

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx4/55/15898/00737561.pdf?arnumber=737561

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of a self-built field-plate gate on InGaP/InGaAs heterojunction doped-channel field-effect transistors;Semiconductor Science and Technology;2007-02-06

2. Comparative Studies on Double δ-Doped Al[sub 0.3]Ga[sub 0.7]As∕In[sub x]Ga[sub 1−x]As∕GaAs Symmetrically Graded Doped-Channel Field-Effect Transistors;Journal of The Electrochemical Society;2007

3. Improved high-temperature characteristics of a symmetrically graded AlGaAs/InxGa1−xAs/AlGaAs pHEMT;Semiconductor Science and Technology;2006-10-18

4. Device performance improvement of InGaP/InGaAs doped-channel FETs;IEEE Electron Device Letters;2005-12

5. Sub-0.25 micron gate-like heterojunction doped-channel FETs with a controllable notch-angle V-gate;Semiconductor Science and Technology;2003-12-22

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